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What’s New xxxv
BSIM3 version 3 MOSFET model
The BSIM3
version 3 model, which was developed at U.C. Berkeley, is
a deep submicron MOSFET model with the same physical
basis as the BSIM3 version 2 model, but with several major
enhancements. These enhancements include:
A single I-V expression to describe current and output
conductance in all regions of device operation.
Better modeling of narrow width devices.
A reformulated capacitance model to improve short
and narrow geometry models.
A new relaxation time model to improve transient
modeling.
Improved model fitting of various W/L ratios using
one parameter set.
BSIM3 version 3 retains the extensive built-in
dependencies of dimensional and processing parameters
of BSIM3 version 2.
To find out more, refer to
MOSFET devices in the
Analo
g
Devices
chapter of the online
M
icroSim PSpice A/D Reference
M
anual.
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